GaAs Schottky Diodes Development for Millimeter Wave Doubler - CY Cergy Paris Université
Communication Dans Un Congrès Année : 2021

GaAs Schottky Diodes Development for Millimeter Wave Doubler

Résumé

We report the fabrication of GaAs Schottky diodes to be integrated in a 75/150 frequency doubler device. It is a collaborative work between IEMN and LERMA relied on the development of a process with optimizing several technological steps. As a result, very highquality GaAs Schottky diodes have been fabricated with a reverse breakdown voltage as high as 15.2 V at about 15 kA.cm-² current density and an ideality factor of 1.1. These results enabled to consider the design and simulation of a millimeter-wave frequency doubler with estimated efficiency and output power up to 30% and 120mW at 150 GHz, respectively.
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Dates et versions

hal-03827748 , version 1 (24-10-2022)

Identifiants

  • HAL Id : hal-03827748 , version 1

Citer

H. Bouillaud, Priyanka Mondal, Giuseppe Di Gioia, Mohammed Samnouni, Malek Zegaoui, et al.. GaAs Schottky Diodes Development for Millimeter Wave Doubler. Wocsdice 2021 - 44th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, Oct 2021, Bristol, United Kingdom. ⟨hal-03827748⟩
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